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What if the variety of exotic species thriving throughout the world could talk to us through the written word?
What if it could choose just one of us to tell its story, and then carry it to our children, grandchildren, and those yet unborn?
What if we were so moved by the gravity of this idea, we took over the world?
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We can save even the animals who are so small, and so often overlooked, that we can’t tell them apart from rocks and dust.
We can do it all, all at once. We can do it for the sake of humanity, for the sake of the lions and the elephants and the ginkgos, and for the sake of our children.
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Windows 8 Forums. Welcome to your Windows 8 Forums home. This application claims priority to Korean Patent Application No. 2003-50302, filed on Feb. 24, 2003, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.
1. Field of the Invention
The present invention relates to a semiconductor memory device and a method of manufacturing the same, and more particularly, to a semiconductor memory device having a stack structure of a plurality of layers and a method of manufacturing the same.
2. Description of the Related Art
Memory devices are categorized into volatile memory devices and non-volatile memory devices. Volatile memory devices include random access memory (RAM) devices. The RAM devices include a dynamic RAM (DRAM) device and a static RAM (SRAM) device. The non-volatile memory devices include read-only memory (ROM) devices. ROM devices are used in various application environments, e.g., data files, graphics, encryption, cryptography, etc. Non-volatile memory devices generally have higher data storage density than ROM devices.
One approach for increasing storage density of non-volatile memory devices has been the development of a semiconductor memory device that has a stack structure. The stack structure of the semiconductor memory device includes a plurality of unit cells, each of which has a stack structure including a tunnel oxide layer, a polysilicon floating gate, a dielectric layer and a polysilicon control gate. A capacitor in the stack structure is formed by the stack structure of the unit cells.
Referring to FIG. 1, a conventional stack-type non-volatile memory device includes an integrated circuit region 10, a memory cell region 20 and a peripheral circuit region 30. The integrated circuit region 10 includes a plurality of gate electrodes 12, a plurality of active regions 13 and a plurality of spacer structures 11. The gate electrodes 12 and the active regions 13 define a plurality of first active regions 10a and a plurality of second active regions 10b between the gate